發表於2024-11-30
圖書基本信息 | |
圖書名稱 | 化閤物半導體加工中的錶徵 |
作者 | (美)布倫德爾 等 |
定價 | 68.00元 |
齣版社 | 哈爾濱工業大學齣版社 |
ISBN | 9787560342818 |
齣版日期 | 2014-01-01 |
字數 | |
頁碼 | |
版次 | 1 |
裝幀 | 平裝 |
開本 | 16開 |
商品重量 | 0.4Kg |
內容簡介 | |
化閤物半導體加工中的錶徵一書是為使用化閤物半導體材料與設備的科學傢與工程師準備的,他們並不是錶徵專傢。在研發與GaAs、GaA1As、LnP及HgCdTe基設備的製造中通常使用的材料與工藝提供常見的分析問題實例。這本布倫德爾、埃文斯、麥剋蓋爾編著的《化閤物半導體加工中的錶徵》討論瞭各種錶徵技術,深入瞭解每種技術是如何單獨或結閤使用來解決與材料相關的問題。這本書有助於選擇並應用適當的分析技術在材料與設備加工的各個階段,如:基體處理、外延生長、絕緣膜沉積、接觸組、摻雜劑的引入。 |
作者簡介 | |
目錄 | |
Preface to the Reissue of the Materials Characterization Series Preface to Series Preface to the Reissue of Characterization of Compound Semiconductor Processing Preface xiii Contributors xv CHARACTERIZATION OF III-V THIN FILMS FOR ELECTRONIC DEVICES 1.1 Introduction 1.2 Surface Characterization of GaAs Wafers Dislocations 3, Surface Composition and Chemical State 1.3 Ion Implantation 1.4 Epitaxial Crystal Growth 1.5 Summary Ⅲ-V POUND SEMICONDUCTOR FILMS FOROPTICAL APPLICATIONS 2.1 Introduction 2.2 Growth Rate/LayerThickness In Situ Growth Monitors 20, Post-Growth Structural Analysis 2.3 Composition Analysis 2.4 Impurity and Dopant Analysis 2.5 Electrical Properties in Optical Structures 2.6 Optical Properties in Single and Multilayer Structures 2.7 Interface Properties in Multilayer Structures 2.8 Summary CONTACTS 3.1 Introduction 3.2 In Situ Probes Surface Preparation and Characterization 44, Initial Metal Deposition 45, Subsequent Metal Deposition 3.3 Unpatterned Test Structures Electrical Characterization 48, Concentration Profiling 49, Electron Microscopy 3.4 Patterned Test Structures Barrier Height 51, Contact Resistance 53, Morphology DIELECTRIC INSULATING LAYERS 4.1 Introduction 4.2 Oxides and Oxidation 4.3 HeteromorphicInsulators 4.4 Chemical Modification of GaAs Surfaces 4.5 Indium Phosphide-Insulator Interfaces 4.6 Heterojunction Quasi-Insulator Interfaces 4.7 Epitaxial Fluoride Insulators 4.8 Commentary OTHER POUND SEMICONDUCTOR FILMS 5.1 Introduction A Focus on HgCdTe 83, Objective and Scope 84, Background 84, Representative Device Structure 5.2 Substrates and the CdTe Surface (Interface 1) Substrate Quality 86, Substrate Surface Preparation 5.3 Epitaxial HgCdTe Materials (Between Interfaces 2 and 5) Desired Characteristics of the Active Layers 90, Composition 90, Crystalline Quality 91, Doping 93, Minority Carrier Lifetime 5.4 Heterojunction Interfaces (Interface 3) Advantages of the Heterojunction 98, Desired Characteristics 98, Characterizations 5.5 HgCdTe Surface Preparation (Interfaces 4 and 5) Importance of the Chemically Etched Surface 100, Monitoring of the Surface Cleanliness by Ellipsometry 101, Characterization of Thin Native Oxides on HgCdTe by XPS 102, Surface Analysis by UPS 5.6 Summary DEEP LEVEL TRANSIENT SPECTROSCOPY: A CASE STUDY ON GaAs 6.1 Introduction 6.2 DLTS Technique: General Features 6.3 Fabrication and Qualification of Schottky Diodes 6.4 DLTS System 6.5 DLTS Measurement Procedure 6.6 Data Analysis DLTS Spectrum 117, Activation Energy for Thermal Emission 118, Trap Densities 6.7 EL2 Center 6.8 Summary APPENDIX: TECHNIQUE SUMMARIES 1 Auger Electron Spectroscopy (AES) 2 Ballistic Electron Emission Microscopy (BEEM) 3 Capacitance-Voltage (C-V) Measurements 4 Deep Level Transient Spectroscopy (DLTS) 5 Dynamic Secondary Ion Mass Spectrometry (D-SIMS) 6 Electron Beam Induced Current (EBIC) Microscopy 7 Energy-Dispersive X-Ray Spectroscopy (EDS) 8 Focused Ion Beams (FIBs) 9 Fourier Transform Infrared Spectroscopy (FTIR) 10 Hall Effect Resistivity Measurements 11 Inductively Coupled Plasma Mass Spectrometry (ICPMS) 12 Light Microscopy 13 Low-Energy Electron Diffraction (LEED) 14 Neutron Activation Analysis (NAA) 15 Optical Scatterometry 16 Photoluminescence (PL) 17 Raman Spectroscopy 18 Reflection High-Energy Electro 化閤物半導體加工中的錶徵 下載 mobi epub pdf txt 電子書 格式 化閤物半導體加工中的錶徵 mobi 下載 pdf 下載 pub 下載 txt 電子書 下載 2024化閤物半導體加工中的錶徵 下載 mobi pdf epub txt 電子書 格式 2024 化閤物半導體加工中的錶徵 下載 mobi epub pdf 電子書用戶評價
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